JAN1N4454-1 Microsemi IRE Division DIODE GEN PURP 50V 200MA DO35 Diode Standard 50V 200mA Through Hole DO-35

ProducentMicrosemi IRE Division
Part Number

JAN1N4454-1 (JAN1N44541)

Specifications

DIODE GEN PURP 50V 200MA DO35 Diode Standard 50V 200mA Through Hole DO-35

Unit Price0,81 EUR
Minimum Order Quantity1
Tariff No.
Lead Time70 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer Microsemi IRE Division Series Military, MIL-PRF-19500/144 Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 10mA Speed Small Signal = Reverse Recovery Time (trr) 4ns Current - Reverse Leakage @ Vr 100nA @ 50V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -55°C ~ 175°C
Datasheets
E-shop Coming Soon

E-shop Coming Soon
E-shop Coming Soon

E-shop Coming Soon
Related Parts
1N4454Microsemi Corporation1,05 EUR
1N4454-1Microsemi Corporation1,25 EUR
JANTXV1N4454UR-1Microsemi IRE Division4,30 EUR
1N4454_T50RFairchild/ON Semiconductor
1N914ATRFairchild/ON Semiconductor7375,37 EUR
1N914BWTFairchild/ON Semiconductor207,36 EUR
JANTX1N914URMicrosemi IRE Division7,42 EUR
JANTX1N914Microsemi IRE Division4,68 EUR
1N914TRVishay Semiconductor Diodes Division207,19 EUR
JAN1N914Microsemi IRE Division2,39 EUR
All Producents | Microsemi IRE Division producent
© 2015 WorldHNews.com