JANTXV1N5619 Microsemi IRE Division DIODE GEN PURP 600V 1A AXIAL Diode Standard 600V 1A Through Hole
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Producent | Microsemi IRE Division | Part Number | JANTXV1N5619 (JANTXV1N5619) |
Specifications | DIODE GEN PURP 600V 1A AXIAL Diode Standard 600V 1A Through Hole |
Unit Price | 14,82 EUR |
Minimum Order Quantity | 1 |
Tariff No. | |
Lead Time | 98 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer Microsemi IRE Division Series Military, MIL-PRF-19500/429 Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.6V @ 3A Speed Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) 250ns Current - Reverse Leakage @ Vr 500nA @ 600V Capacitance @ Vr, F 25pF @ 12V, 1MHz Mounting Type Through Hole Package / Case A, Axial Operating Temperature - Junction -65°C ~ 175°C |
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