JANTXV1N6628 Microsemi IRE Division DIODE GEN PURP 660V 1.75A AXIAL Diode Standard 660V 1.75A Through Hole

ProducentMicrosemi IRE Division
Part Number

JANTXV1N6628 (JANTXV1N6628)

Specifications

DIODE GEN PURP 660V 1.75A AXIAL Diode Standard 660V 1.75A Through Hole

Unit Price30,97 EUR
Minimum Order Quantity1
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DescriptionCategories Discrete Semiconductor Products Diodes - Rectifiers - Single Manufacturer Microsemi IRE Division Series Military, MIL-PRF-19500/590 Packaging Bulk Part Status Active Diode Type Standard Voltage - DC Reverse (Vr) (Max) 660V Current - Average Rectified (Io) 1.75A Voltage - Forward (Vf) (Max) @ If 1.35V @ 2A Speed Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 2µA @ 660V Capacitance @ Vr, F 40pF @ 10V, 1MHz Mounting Type Through Hole Package / Case E, Axial Operating Temperature - Junction -65°C ~ 150°C
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