JANS2N3637 Microsemi IRE Division TRANS PNP 175V 1A TO-39 Bipolar (BJT) Transistor PNP 175V 1A 1W Through Hole TO-39
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| Producent | Microsemi IRE Division | | Part Number | JANS2N3637 (JANS2N3637) |
| Specifications | TRANS PNP 175V 1A TO-39 Bipolar (BJT) Transistor PNP 175V 1A 1W Through Hole TO-39 |
| Unit Price | 83,67 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 231 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer Microsemi IRE Division Series Military, MIL-PRF-19500/357 Packaging Bulk Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 175V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10µA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V Power - Max 1W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 |
| Datasheets | |
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