PSMN013-100ES,127 Nexperia USA Inc. MOSFET N-CH 100V I2PAK N-Channel 100V 68A (Tc) 170W (Tc) Through Hole I2PAK

ProducentNexperia USA Inc.
Part Number

PSMN013-100ES,127 (PSMN013100ES127)

Specifications

MOSFET N-CH 100V I2PAK N-Channel 100V 68A (Tc) 170W (Tc) Through Hole I2PAK

Unit Price1,29 EUR
Minimum Order Quantity50
Tariff No.
Lead Time140 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Nexperia USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3195pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 170W (Tc) Rds On (Max) @ Id, Vgs 13.9 mOhm @ 15A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Datasheets
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