PMFPB8032XP,115 Nexperia USA Inc. MOSFET P-CH 20V 2.7A HUSON6 P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount DFN2020-6

ProducentNexperia USA Inc.
Part Number

PMFPB8032XP,115 (PMFPB8032XP115)

Specifications

MOSFET P-CH 20V 2.7A HUSON6 P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount DFN2020-6

Unit Price0,55 EUR
Minimum Order Quantity1
Tariff No.
Lead Time140 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Nexperia USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V Vgs (Max) ±12V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 485mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs 102 mOhm @ 2.7A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN2020-6 Package / Case 6-UDFN Exposed Pad
Datasheets
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