PBSS4140DPN,115 NXP NXP PBSS4140DPN,115 NPN+PNP Dual Low Saturation Bipolar Transistor, 1 A 40 V, 6-pin TSOP
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| Producent | NXP | | Part Number | PBSS4140DPN,115 (PBSS4140DPN115) |
| Specifications | NXP PBSS4140DPN,115 NPN+PNP Dual Low Saturation Bipolar Transistor, 1 A 40 V, 6-pin TSOP |
| Unit Price | 0,35 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryBipolar Small Signal ConfigurationDual Dimensions1 x 3.1 x 1.7mm Height1mm Length3.1mm Maximum Collector Base Voltage40 V Maximum Collector Emitter Saturation Voltage0.5 V Maximum Collector Emitter Voltage40 V Maximum DC Collector Current1 A Maximum Emitter Base Voltage5 V Maximum Operating Frequency150 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation0.37 W Minimum DC Current Gain200 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip2 Package TypeTSOP Pin Count6 Transistor TypeNPN, PNP Width1.7mm Product Details Low Saturation Voltage Dual NPN/PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors |
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