PBSS4330X,115 NXP NXP PBSS4330X,115 NPN Low Saturation Bipolar Transistor, 3 A 30 V, 4-pin UPAK
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| Producent | NXP | | Part Number | PBSS4330X,115 (PBSS4330X115) |
| Specifications | NXP PBSS4330X,115 NPN Low Saturation Bipolar Transistor, 3 A 30 V, 4-pin UPAK |
| Unit Price | 0,25 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryBipolar Power ConfigurationSingle Dimensions1.6 x 4.6 x 2.6mm Height1.6mm Length4.6mm Maximum Base Emitter Saturation Voltage1.2 V Maximum Collector Base Voltage50 V Maximum Collector Emitter Saturation Voltage0.3 V Maximum Collector Emitter Voltage30 V Maximum DC Collector Current3 A Maximum Emitter Base Voltage6 V Maximum Operating Frequency100 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation1.6 W Minimum DC Current Gain180 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeUPAK Pin Count4 Transistor TypeNPN Width2.6mm Product Details Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors |
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