PBSS8110X NXP NXP PBSS8110X NPN Low Saturation Bipolar Transistor, 1 A 100 V, 3-pin SOT-89
| |
|
| Producent | NXP | | Part Number | PBSS8110X (PBSS8110X) |
| Specifications | NXP PBSS8110X NPN Low Saturation Bipolar Transistor, 1 A 100 V, 3-pin SOT-89 |
| Unit Price | 0,33 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | |
| Weight and Dimension | |
| Description | CategorySmall Signal ConfigurationSingle Dimensions4.6 x 2.6 x 1.6mm Height1.6mm Length4.6mm Maximum Base Emitter Saturation Voltage1.05 V Maximum Collector Base Voltage120 V Maximum Collector Emitter Saturation Voltage200 mV Maximum Collector Emitter Voltage100 V Maximum DC Collector Current1 A Maximum Emitter Base Voltage5 V Maximum Operating Frequency100 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation2 W Minimum DC Current Gain80 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeSOT-89 Pin Count3 Transistor TypeNPN Width2.6mm Product Details Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
