PBSS9110Y NXP NXP PBSS9110Y PNP Low Saturation Bipolar Transistor, 1 A 100 V, 6-pin UMT
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| Producent | NXP | | Part Number | PBSS9110Y (PBSS9110Y) |
| Specifications | NXP PBSS9110Y PNP Low Saturation Bipolar Transistor, 1 A 100 V, 6-pin UMT |
| Unit Price | 0,18 EUR |
| Minimum Order Quantity | 1 |
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| Description | CategoryBipolar Small Signal ConfigurationSingle Dimensions1 x 2.2 x 1.35mm Height1mm Length2.2mm Maximum Base Emitter Saturation Voltage1.1 V Maximum Collector Base Voltage120 V Maximum Collector Emitter Saturation Voltage0.32 V Maximum Collector Emitter Voltage100 V Maximum DC Collector Current1 A Maximum Emitter Base Voltage5 V Maximum Operating Frequency100 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation0.625 W Minimum DC Current Gain125 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeUMT Pin Count6 Transistor TypePNP Width1.35mm Product Details Low Saturation Voltage PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors |
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