PHE13009 NXP NXP PHE13009 NPN High Voltage Bipolar Transistor, 12 A 700 V, 3-pin TO-220AB
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Producent | NXP | Part Number | PHE13009 (PHE13009) |
Specifications | NXP PHE13009 NPN High Voltage Bipolar Transistor, 12 A 700 V, 3-pin TO-220AB |
Unit Price | 1,17 EUR |
Minimum Order Quantity | 1 |
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Weight and Dimension | |
Description | CategoryHigh Voltage ConfigurationSingle Dimensions10.3 x 4.5 x 15.8mm Height15.8mm Length10.3mm Maximum Base Emitter Saturation Voltage1.6 V Maximum Collector Base Voltage700 V Maximum Collector Emitter Saturation Voltage2 V Maximum Collector Emitter Voltage700 V Maximum DC Collector Current12 A Maximum Operating Frequency60 Hz Maximum Operating Temperature+150 °C Maximum Power Dissipation80 W Minimum DC Current Gain6 Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-220AB Pin Count3 Transistor TypeNPN Width4.5mm Product Details High Voltage Transistors, NXP Bipolar Transistors, NXP Semiconductors |
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