PHE13009 NXP NXP PHE13009 NPN High Voltage Bipolar Transistor, 12 A 700 V, 3-pin TO-220AB

ProducentNXP
Part Number

PHE13009 (PHE13009)

Specifications

NXP PHE13009 NPN High Voltage Bipolar Transistor, 12 A 700 V, 3-pin TO-220AB

Unit Price1,17 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategoryHigh Voltage ConfigurationSingle Dimensions10.3 x 4.5 x 15.8mm Height15.8mm Length10.3mm Maximum Base Emitter Saturation Voltage1.6 V Maximum Collector Base Voltage700 V Maximum Collector Emitter Saturation Voltage2 V Maximum Collector Emitter Voltage700 V Maximum DC Collector Current12 A Maximum Operating Frequency60 Hz Maximum Operating Temperature+150 °C Maximum Power Dissipation80 W Minimum DC Current Gain6 Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-220AB Pin Count3 Transistor TypeNPN Width4.5mm Product Details High Voltage Transistors, NXP Bipolar Transistors, NXP Semiconductors
Datasheets
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