BCM857BS,115 NXP TRANSISTOR, MATCHED, SOT-363, REEL
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| Producent | NXP | | Part Number | BCM857BS,115 (BCM857BS115) |
| Specifications | TRANSISTOR, MATCHED, SOT-363, REEL |
| Unit Price | 0,10 EUR |
| Minimum Order Quantity | 3000 |
| Tariff No. | 85412100 |
| Lead Time | 22 weeks |
| Weight and Dimension | 0.001 Kg |
| Description | Collector Emitter Voltage V(br)ceo: 45V DC Collector Current: 100mA DC Current Gain hFE: 290 MSL: MSL 1 - Unlimited No. of Pins: 6 Operating Temperature Max: 150°C Power Dissipation Pd: 200mW SVHC: No SVHC (16-Jun-2014) Transistor Case Style: SOT-363 Transistor Polarity: PNP NXP-BCM857BS,115-TRANSISTOR, MATCHED, SOT-363, REEL;TRANSISTOR, MATCHED, SOT-363, REEL; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:290; Transistor Case Style:SOT-363; No. of Pins:6; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (16-Jun-2014); Collector Emitter Saturation Voltage Vce(on):-200mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:250MHz; Hfe Min:200; Module Configuration:Dual; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Packaging:Tape & Reel; Power Dissipation Ptot Max:200mW; Power Dissipation per device Max:300mW; SMD Marking:A9*; Transition Frequency ft:175MHz; Voltage Vcbo:50V |
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