PBSS9110X,135 NXP Semiconductors Bipolar Transistors - BJT LO VCESAT(BISS)TRANS

ProducentNXP Semiconductors
Part Number

PBSS9110X,135 (PBSS9110X135)

Specifications

Bipolar Transistors - BJT LO VCESAT(BISS)TRANS

Unit Price0,55 EUR
Minimum Order Quantity1
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Lead Time
Weight and Dimension
DescriptionNXP Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: NXP Semiconductors Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 1 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: UPAK DC Collector/Base Gain hFE Min: 150 at 1 mA at 5 V, 150 at 250 mA at 5 V, 150 at 0.5 A at 5 V, 125 at 1 A at 5 V DC Current Gain hFE Max: 150 at 1 mA at 5 V Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 65 C Packaging: Reel Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS9110X
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