BC856B,215 NXP Semiconductors Bipolar Transistors - BJT PNP GP 100MA 65V
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| Producent | NXP Semiconductors | | Part Number | BC856B,215 (BC856B215) |
| Specifications | Bipolar Transistors - BJT PNP GP 100MA 65V |
| Unit Price | 0,17 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 5 weeks |
| Weight and Dimension | |
| Description | NXP Product Category: Bipolar Transistors - BJT RoHS: Details Brand: NXP Semiconductors Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.2 A Gain Bandwidth Product fT: 100 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-23 DC Collector/Base Gain hFE Min: 220 at 2 mA at 5 V DC Current Gain hFE Max: 220 at 2 mA at 5 V Maximum Power Dissipation: 250 mW Minimum Operating Temperature: - 65 C Packaging: Reel Factory Pack Quantity: 3000 Part # Aliases: BC856B T/R |
| Datasheets | |
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