BUK9K29-100E,115 NXP Semiconductors MOSFET Dual N-channel 100 V 29 mo FET
| |
|
| Producent | NXP Semiconductors | | Part Number | BUK9K29-100E,115 (BUK9K29100E115) |
| Specifications | MOSFET Dual N-channel 100 V 29 mo FET |
| Unit Price | 1,72 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 7 weeks |
| Weight and Dimension | |
| Description | NXP Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 25.1 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 15 V Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 5.6 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 68 W Mounting Style: SMD/SMT Package/Case: SOT-1205-8 Packaging: Reel Brand: NXP Semiconductors Channel Mode: Enhancement Configuration: Dual Fall Time: 35.1 ns Minimum Operating Temperature: - 55 C Rise Time: 6.4 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 67.3 ns |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
