BUK7510-100B,127 NXP Semiconductors MOSFET HIGH PERF TRENCHMOS
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| Producent | NXP Semiconductors | | Part Number | BUK7510-100B,127 (BUK7510100B127) |
| Specifications | MOSFET HIGH PERF TRENCHMOS |
| Unit Price | 2,89 EUR |
| Minimum Order Quantity | 1 |
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| Description | NXP Product Category: MOSFET RoHS: Details Brand: NXP Semiconductors Id - Continuous Drain Current: 110 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 10 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 300 W Mounting Style: Through Hole Package/Case: TO-220-3 Packaging: Tube Channel Mode: Enhancement Configuration: Single Fall Time: 36 ns Minimum Operating Temperature: - 55 C Rise Time: 45 ns Factory Pack Quantity: 1000 Typical Turn-Off Delay Time: 120 ns Part # Aliases: BUK7510-100B |
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