PSMN1R1-30EL,127 NXP Semiconductors MOSFET N-Ch 30V 1.3 mOhms
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| Producent | NXP Semiconductors | | Part Number | PSMN1R1-30EL,127 (PSMN1R130EL127) |
| Specifications | MOSFET N-Ch 30V 1.3 mOhms |
| Unit Price | 2,86 EUR |
| Minimum Order Quantity | 1 |
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| Description | NXP Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 120 A Vds - Drain-Source Breakdown Voltage: 30 V Rds On - Drain-Source Resistance: 1.3 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W Mounting Style: Through Hole Package/Case: I2PAK-3 Packaging: Tube Brand: NXP Semiconductors Minimum Operating Temperature: - 55 C Factory Pack Quantity: 1000 |
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