PSMN012-100YS,115 NXP Semiconductors MOSFET N-CHANNEL 100V STD LEVEL MOSFET
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| Producent | NXP Semiconductors | | Part Number | PSMN012-100YS,115 (PSMN012100YS115) |
| Specifications | MOSFET N-CHANNEL 100V STD LEVEL MOSFET |
| Unit Price | 1,43 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 12 weeks |
| Weight and Dimension | |
| Description | NXP Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 60 A Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 23 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Vgs th - Gate-Source Threshold Voltage: 4.6 V Qg - Gate Charge: 64 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 130 W Mounting Style: SMD/SMT Package/Case: LFPAK-4 Packaging: Reel Brand: NXP Semiconductors Channel Mode: Enhancement Configuration: Single Triple Source Fall Time: 25 ns Minimum Operating Temperature: - 55 C Rise Time: 31 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 52.5 ns |
| Datasheets | |
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