BUK9Y8R5-80EX NXP Semiconductors MOSFET N-channel 40 V 7.6 mo FET
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| Producent | NXP Semiconductors | | Part Number | BUK9Y8R5-80EX (BUK9Y8R580EX) |
| Specifications | MOSFET N-channel 40 V 7.6 mo FET |
| Unit Price | 1,60 EUR |
| Minimum Order Quantity | 1 |
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| Description | NXP Product Category: MOSFET RoHS: Details Id - Continuous Drain Current: 100 A Vds - Drain-Source Breakdown Voltage: 80 V Rds On - Drain-Source Resistance: 6.3 mOhms Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: 15 V Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 54.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 238 W Mounting Style: SMD/SMT Package/Case: LFPAK-4 Packaging: Reel Brand: NXP Semiconductors Channel Mode: Enhancement Configuration: Single Fall Time: 45 ns Minimum Operating Temperature: - 55 C Rise Time: 50 ns Factory Pack Quantity: 1500 Typical Turn-Off Delay Time: 82 ns |
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