BLF6G22LS-100,118 NXP Semiconductors RF MOSFET Transistors LDMOS TNS
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| Producent | NXP Semiconductors | | Part Number | BLF6G22LS-100,118 (BLF6G22LS100118) |
| Specifications | RF MOSFET Transistors LDMOS TNS |
| Unit Price | 66,65 EUR |
| Minimum Order Quantity | 100 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | |
| Description | NXP Product Category: RF MOSFET Transistors RoHS: Details Brand: NXP Semiconductors Transistor Type: MOSFET Power Id - Continuous Drain Current: 29 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 160 mOhms Transistor Polarity: N-Channel Technology: Si Vgs - Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-502B-3 Packaging: Reel Minimum Operating Temperature: - 65 C Product Type: MOSFET Power Factory Pack Quantity: 100 Part # Aliases: /T3 BLF6G22LS-100 |
| Datasheets | |
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