BLF6G38-10G,112 NXP Semiconductors RF MOSFET Transistors LDMOS TNS
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| Producent | NXP Semiconductors | | Part Number | BLF6G38-10G,112 (BLF6G3810G112) |
| Specifications | RF MOSFET Transistors LDMOS TNS |
| Unit Price | 31,62 EUR |
| Minimum Order Quantity | 180 |
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| Description | NXP Product Category: RF MOSFET Transistors RoHS: Details Brand: NXP Semiconductors Transistor Type: MOSFET Power Id - Continuous Drain Current: 3.1 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 1.256 Ohms Transistor Polarity: N-Channel Technology: Si Vgs - Gate-Source Breakdown Voltage: 13 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-502A-3 Packaging: Tube Minimum Operating Temperature: - 65 C Product Type: MOSFET Power Factory Pack Quantity: 180 Part # Aliases: BLF6G38-10G |
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