BLF8G27LS-150VJ NXP Semiconductors RF MOSFET Transistors Power LDMOS transistor
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| Producent | NXP Semiconductors | | Part Number | BLF8G27LS-150VJ (BLF8G27LS150VJ) |
| Specifications | RF MOSFET Transistors Power LDMOS transistor |
| Unit Price | 69,90 EUR |
| Minimum Order Quantity | 100 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | |
| Description | NXP Product Category: RF MOSFET Transistors RoHS: Details Transistor Type: LDMOS Power Id - Continuous Drain Current: 1.3 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 60 mOhms Frequency: 2500 MHz to 2700 MHz Technology: Si Vgs - Gate-Source Breakdown Voltage: 13 V Gain: 18 dB Maximum Operating Temperature: + 225 C Mounting Style: SMD/SMT Package/Case: SOT-1244B-7 Packaging: Reel Brand: NXP Semiconductors Forward Transconductance - Min: 16 S Product Type: RF Power Transistor Factory Pack Quantity: 100 Type: Power LDMOS Transistor Vgs th - Gate-Source Threshold Voltage: 1.9 V |
| Datasheets | |
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