BLF6G22L-40BN,118 NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR
| |
|
Producent | NXP Semiconductors | Part Number | BLF6G22L-40BN,118 (BLF6G22L40BN118) |
Specifications | RF MOSFET Transistors PWR LDMOS TRANSISTOR |
Unit Price | 54,39 EUR |
Minimum Order Quantity | 100 |
Tariff No. | |
Lead Time | 6 weeks |
Weight and Dimension | |
Description | NXP Product Category: RF MOSFET Transistors RoHS: Details Id - Continuous Drain Current: 345 mA Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 250 mOhms Transistor Polarity: N-Channel Frequency: 2 GHz to 2.2 GHz Vgs - Gate-Source Breakdown Voltage: 13 V Gain: 19 dB Output Power: 2.5 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-1121A-5 Packaging: Reel Brand: NXP Semiconductors Factory Pack Quantity: 100 Vgs th - Gate-Source Threshold Voltage: 1.9 V |
Datasheets | |
E-shop Coming Soon
| |
E-shop Coming Soon
| |
Related Parts
| |
|