BLF7G10L-250,112 NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR
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| Producent | NXP Semiconductors | | Part Number | BLF7G10L-250,112 (BLF7G10L250112) |
| Specifications | RF MOSFET Transistors PWR LDMOS TRANSISTOR |
| Unit Price | 89,43 EUR |
| Minimum Order Quantity | 60 |
| Tariff No. | |
| Lead Time | 6 weeks |
| Weight and Dimension | |
| Description | NXP Product Category: RF MOSFET Transistors RoHS: Details Id - Continuous Drain Current: 1.8 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 57 mOhms Transistor Polarity: N-Channel Frequency: 920 MHz to 960 MHz Vgs - Gate-Source Breakdown Voltage: 13 V Gain: 19.5 dB Output Power: 60 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-502A-3 Packaging: Tube Brand: NXP Semiconductors Factory Pack Quantity: 60 Vgs th - Gate-Source Threshold Voltage: 1.9 V |
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