BLL6H1214LS-500,11 NXP Semiconductors RF MOSFET Transistors PWR LDMOS TRANSISTOR
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| Producent | NXP Semiconductors | | Part Number | BLL6H1214LS-500,11 (BLL6H1214LS50011) |
| Specifications | RF MOSFET Transistors PWR LDMOS TRANSISTOR |
| Unit Price | 482,14 EUR |
| Minimum Order Quantity | 60 |
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| Description | NXP Product Category: RF MOSFET Transistors RoHS: Details Transistor Type: LDMOS Power Id - Continuous Drain Current: 150 mA Vds - Drain-Source Breakdown Voltage: 100 V Rds On - Drain-Source Resistance: 164 mOhms Transistor Polarity: N-Channel Frequency: 1.2 GHz to 1.4 GHz Technology: Si Vgs - Gate-Source Breakdown Voltage: 13 V Gain: 17 dB Output Power: 500 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-539B-3 Packaging: Tube Brand: NXP Semiconductors Factory Pack Quantity: 60 Vgs th - Gate-Source Threshold Voltage: 1.8 V |
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