BZT52H-B12,115 NXP Semiconductors Zener diode BZT52H-B12,115 Enclosure type (semiconductors) SOD 123F NXP Semiconductors Zener voltage 12 V ATT.NUM.P_TOT

ProducentNXP Semiconductors
Part Number

BZT52H-B12,115 (BZT52HB12115)

Specifications

Zener diode BZT52H-B12,115 Enclosure type (semiconductors) SOD 123F NXP Semiconductors Zener voltage 12 V ATT.NUM.P_TOT

Unit Price0,54 EUR
Minimum Order Quantity1
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Weight and Dimension
DescriptionTechnical data Type BZT52H-B12,115 Manufacturer NXP Semiconductors Manuf. Code NXP Category Zener diode Z voltage (UZ) 12 V Z voltage tolerance +5 %, -5 % Max. power 375 mW 375 mW Impedance 10 Ω Impedance reference 5 mA UF 900 mV Forward voltage reference 10 mA Operating temperature (min.) -65 °C Max. operating temperature +200 °C Configuration 1 diode Residual reverse leakage current 100 nA Residual reverse leakage current reference 8 V Uz (max.) 12.6 V Uz(min.) 11.4 V Enclosure SOD 123F Mounting type Surface-mount
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