PSMN8R5-100ESQ NXP USA Inc. MOSFET N-CH 100V 100A I2PAK N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2PAK
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| Producent | NXP USA Inc. | | Part Number | PSMN8R5-100ESQ (PSMN8R5100ESQ) |
| Specifications | MOSFET N-CH 100V 100A I2PAK N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2PAK |
| Unit Price | 1,33 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 140 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tj) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5512pF @ 50V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 263W (Tc) Rds On (Max) @ Id, Vgs 8.5 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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