PSMN057-200P,127 NXP USA Inc. MOSFET N-CH 200V 39A TO220AB N-Channel 200V 39A (Tc) 250W (Tc) Through Hole TO-220AB

ProducentNXP USA Inc.
Part Number

PSMN057-200P,127 (PSMN057200P127)

Specifications

MOSFET N-CH 200V 39A TO220AB N-Channel 200V 39A (Tc) 250W (Tc) Through Hole TO-220AB

Unit Price0,76 EUR
Minimum Order Quantity50
Tariff No.
Lead Time140 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series TrenchMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Rds On (Max) @ Id, Vgs 57 mOhm @ 17A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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