PSMN1R2-30YLC,115 NXP USA Inc. MOSFET N-CH 30V 100A LFPAK N-Channel 30V 100A (Tc) 215W (Tc) Surface Mount LFPAK, Power-SO8
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| Producent | NXP USA Inc. | | Part Number | PSMN1R2-30YLC,115 (PSMN1R230YLC115) |
| Specifications | MOSFET N-CH 30V 100A LFPAK N-Channel 30V 100A (Tc) 215W (Tc) Surface Mount LFPAK, Power-SO8 |
| Unit Price | 1,02 EUR |
| Minimum Order Quantity | 1 |
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| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5093pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 215W (Tc) Rds On (Max) @ Id, Vgs 1.25 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK, Power-SO8 Package / Case SC-100, SOT-669 |
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