PSMN2R0-30PL,127 NXP USA Inc. MOSFET N-CH 30V 100A TO220AB N-Channel 30V 100A (Tc) 211W (Tc) Through Hole TO-220AB
| |
|
| Producent | NXP USA Inc. | | Part Number | PSMN2R0-30PL,127 (PSMN2R030PL127) |
| Specifications | MOSFET N-CH 30V 100A TO220AB N-Channel 30V 100A (Tc) 211W (Tc) Through Hole TO-220AB |
| Unit Price | 1,29 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 112 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6810pF @ 12V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 211W (Tc) Rds On (Max) @ Id, Vgs 2.1 mOhm @ 15A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
| Datasheets | |
E-shop Coming Soon
 | |
E-shop Coming Soon
| |
Related Parts
| |
|
