PSMN022-30PL,127 NXP USA Inc. MOSFET N-CH 30V TO220AB N-Channel 30V 30A (Tc) 41W (Tc) Through Hole TO-220AB

ProducentNXP USA Inc.
Part Number

PSMN022-30PL,127 (PSMN02230PL127)

Specifications

MOSFET N-CH 30V TO220AB N-Channel 30V 30A (Tc) 41W (Tc) Through Hole TO-220AB

Unit Price0,55 EUR
Minimum Order Quantity50
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 447pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 41W (Tc) Rds On (Max) @ Id, Vgs 22 mOhm @ 5A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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