BUK6E3R4-40C,127 NXP USA Inc. MOSFET N-CH 40V 100A I2PAK N-Channel 40V 100A (Tc) 204W (Tc) Through Hole I2PAK

ProducentNXP USA Inc.
Part Number

BUK6E3R4-40C,127 (BUK6E3R440C127)

Specifications

MOSFET N-CH 40V 100A I2PAK N-Channel 40V 100A (Tc) 204W (Tc) Through Hole I2PAK

Unit Price0,48 EUR
Minimum Order Quantity50
Tariff No.
Lead Time84 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Vgs(th) (Max) @ Id 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8020pF @ 25V FET Feature - Power Dissipation (Max) 204W (Tc) Rds On (Max) @ Id, Vgs 3.6 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Datasheets
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