PSMN030-60YS,115 NXP USA Inc. MOSFET N-CH 60V 29A LFPAK N-Channel 60V 29A (Tc) 56W (Tc) Surface Mount LFPAK, Power-SO8
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Producent | NXP USA Inc. | Part Number | PSMN030-60YS,115 (PSMN03060YS115) |
Specifications | MOSFET N-CH 60V 29A LFPAK N-Channel 60V 29A (Tc) 56W (Tc) Surface Mount LFPAK, Power-SO8 |
Unit Price | 0,58 EUR |
Minimum Order Quantity | 1 |
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Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 686pF @ 30V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 56W (Tc) Rds On (Max) @ Id, Vgs 24.7 mOhm @ 15A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK, Power-SO8 Package / Case SC-100, SOT-669 |
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