PSMN4R3-80PS,127 NXP USA Inc. MOSFET N-CH 80V 120A TO220AB N-Channel 80V 120A (Tc) 306W (Tc) Through Hole TO-220AB
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| Producent | NXP USA Inc. | | Part Number | PSMN4R3-80PS,127 (PSMN4R380PS127) |
| Specifications | MOSFET N-CH 80V 120A TO220AB N-Channel 80V 120A (Tc) 306W (Tc) Through Hole TO-220AB |
| Unit Price | 2,62 EUR |
| Minimum Order Quantity | 50 |
| Tariff No. | |
| Lead Time | 140 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8161pF @ 40V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 306W (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
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