PSMN3R5-80PS,127 NXP USA Inc. MOSFET N-CH 80V 120A TO220AB N-Channel 80V 120A (Tc) 338W (Tc) Through Hole TO-220AB

ProducentNXP USA Inc.
Part Number

PSMN3R5-80PS,127 (PSMN3R580PS127)

Specifications

MOSFET N-CH 80V 120A TO220AB N-Channel 80V 120A (Tc) 338W (Tc) Through Hole TO-220AB

Unit Price2,42 EUR
Minimum Order Quantity50
Tariff No.
Lead Time112 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 9961pF @ 40V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 338W (Tc) Rds On (Max) @ Id, Vgs 3.5 mOhm @ 25A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
Datasheets
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