PMZB350UPE,315 NXP USA Inc. MOSFET P-CH 20V 1A 3DFN P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount 3-DFN1006B (0.6x1)
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| Producent | NXP USA Inc. | | Part Number | PMZB350UPE,315 (PMZB350UPE315) |
| Specifications | MOSFET P-CH 20V 1A 3DFN P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount 3-DFN1006B (0.6x1) |
| Unit Price | 0,37 EUR |
| Minimum Order Quantity | 1 |
| Tariff No. | |
| Lead Time | 140 weeks |
| Weight and Dimension | |
| Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 127pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 360mW (Ta), 3.125W (Tc) Rds On (Max) @ Id, Vgs 450 mOhm @ 300mA, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-DFN1006B (0.6x1) Package / Case 3-XFDFN |
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