BC337-040G On Semiconductor Bipolar Transistors - BJT 800mA 50V NPN

ProducentOn Semiconductor
Part Number

BC337-040G (BC337040G)

Specifications

Bipolar Transistors - BJT 800mA 50V NPN

Unit Price0,56 EUR
Minimum Order Quantity1
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Lead Time
Weight and Dimension
DescriptionON Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: ON Semiconductor Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.7 V Maximum DC Collector Current: 0.8 A Gain Bandwidth Product fT: 210 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-92-3 (TO-226) DC Collector/Base Gain hFE Min: 250 Maximum Power Dissipation: 625 mW Minimum Operating Temperature: - 55 C Packaging: Bulk Series: BC337-040 Factory Pack Quantity: 5000
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