MJD44H11T5G On Semiconductor Bipolar Transistors - BJT 8A 80V 20W NPN

ProducentOn Semiconductor
Part Number

MJD44H11T5G (MJD44H11T5G)

Specifications

Bipolar Transistors - BJT 8A 80V 20W NPN

Unit Price0,59 EUR
Minimum Order Quantity1
Tariff No.
Lead Time18 weeks
Weight and Dimension
DescriptionON Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: ON Semiconductor Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 5 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 16 A Gain Bandwidth Product fT: 85 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: TO-252-3 (DPAK) DC Collector/Base Gain hFE Min: 60 Maximum Power Dissipation: 20 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: MJD44H11 Factory Pack Quantity: 2500
Datasheets
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