2SD1683S On Semiconductor Bipolar Transistors - BJT BIP NPN 4A 50V

ProducentOn Semiconductor
Part Number

2SD1683S (2SD1683S)

Specifications

Bipolar Transistors - BJT BIP NPN 4A 50V

Unit Price0,85 EUR
Minimum Order Quantity1
Tariff No.
Lead Time4 weeks
Weight and Dimension
DescriptionON Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: - 60 V, 60 V Collector- Emitter Voltage VCEO Max: - 50 V, 50 V Emitter- Base Voltage VEBO: - 6 V, 6 V Collector-Emitter Saturation Voltage: - 350 mV, 190 mV Gain Bandwidth Product fT: 150 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-126 Brand: ON Semiconductor DC Collector/Base Gain hFE Min: 40 DC Current Gain hFE Max: 560 Maximum Power Dissipation: 10 W Minimum Operating Temperature: - 55 C Packaging: Bulk Series: 2SD1683 Factory Pack Quantity: 200
Datasheets
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