NJVMJD44H11RLG On Semiconductor Bipolar Transistors - BJT BIP NPN 8A 80V TR

ProducentOn Semiconductor
Part Number

NJVMJD44H11RLG (NJVMJD44H11RLG)

Specifications

Bipolar Transistors - BJT BIP NPN 8A 80V TR

Unit Price0,87 EUR
Minimum Order Quantity1
Tariff No.
Lead Time26 weeks
Weight and Dimension
DescriptionON Semiconductor Product Category: Bipolar Transistors - BJT RoHS:  Details Configuration: Single Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 16 A Gain Bandwidth Product fT: 85 MHz Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: TO-252-3 (DPAK) Brand: ON Semiconductor DC Collector/Base Gain hFE Min: 60 Maximum Power Dissipation: 20 W Minimum Operating Temperature: - 55 C Packaging: Reel Series: MJD44H11 Factory Pack Quantity: 1800
Datasheets
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