NVD5863NLT4G On Semiconductor MOSFET N-CH 60V 14.9A DPAK N-Channel 60V 14.9A (Ta), 82A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount DPAK

ProducentOn Semiconductor
Part Number

NVD5863NLT4G (NVD5863NLT4G)

Specifications

MOSFET N-CH 60V 14.9A DPAK N-Channel 60V 14.9A (Ta), 82A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount DPAK

Unit Price0,41 EUR
Minimum Order Quantity2.5
Tariff No.
Lead Time189 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer ON Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3850pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3.1W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs 7.1 mOhm @ 41A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
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