MJD253T4G On Semiconductor ON Semi MJD253T4G PNP Bipolar Transistor, 4 A 100 V, 3-pin DPAK
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| Producent | On Semiconductor | | Part Number | MJD253T4G (MJD253T4G) |
| Specifications | ON Semi MJD253T4G PNP Bipolar Transistor, 4 A 100 V, 3-pin DPAK |
| Unit Price | 0,56 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | CategoryPower Transistor ConfigurationSingle Dimensions6.73 x 6.22 x 2.38mm Height2.38mm Length6.73mm Maximum Base Emitter Saturation Voltage1.8 V dc Maximum Collector Base Voltage100 V dc Maximum Collector Emitter Saturation Voltage0.6 V dc Maximum Collector Emitter Voltage100 V Maximum DC Collector Current4 A Maximum Emitter Base Voltage7 V dc Maximum Operating Frequency10 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation12.5 W Minimum DC Current Gain15 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeDPAK Pin Count3 Transistor TypePNP Width6.22mm Product Details PNP Power Transistors, ON Semiconductor Bipolar Transistors, ON Semiconductor A wide range of Bipolar Transistors from ON Semiconductor, which includes the following categories: Small Signal TransistorsGeneral Purpose TransistorsDual NPN and PNP TransistorsPower TransistorsHigh Voltage TransistorsRF Bipolar TransistorsLow Noise, Dual Matched and Complex Bipolar Transistors |
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