MMBTA13LT1G On Semiconductor ON Semi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23
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| Producent | On Semiconductor | | Part Number | MMBTA13LT1G (MMBTA13LT1G) |
| Specifications | ON Semi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23 |
| Unit Price | 356,58 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | ConfigurationCommon Collector Dimensions3.04 x 1.4 x 1.01mm Height1.01mm Length3.04mm Maximum Base Emitter Saturation Voltage1.5 V Maximum Collector Base Voltage30 V Maximum Collector Cut-off Current100nA Maximum Collector Emitter Saturation Voltage1.5 V Maximum Collector Emitter Voltage30 V Maximum Continuous Collector Current300 mA Maximum Emitter Base Voltage10 V Maximum Operating Temperature+150 °C Maximum Power Dissipation300 mW Minimum DC Current Gain5000 Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip2 Package TypeSOT-23 Pin Count3 Transistor TypeNPN Width1.4mm Product Details NPN Darlington Transistors, ON Semiconductor Bipolar Transistors, ON Semiconductor A wide range of Bipolar Transistors from ON Semiconductor, which includes the following categories: Small Signal TransistorsGeneral Purpose TransistorsDual NPN and PNP TransistorsPower TransistorsHigh Voltage TransistorsRF Bipolar TransistorsLow Noise, Dual Matched and Complex Bipolar Transistors |
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