NGB18N40ACLBT4G On Semiconductor ON Semiconductor NGB18N40ACLBT4G N-channel IGBT Transistor, 18 A 430 V, 1MHz, 3-Pin D2PAK
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| Producent | On Semiconductor | | Part Number | NGB18N40ACLBT4G (NGB18N40ACLBT4G) |
| Specifications | ON Semiconductor NGB18N40ACLBT4G N-channel IGBT Transistor, 18 A 430 V, 1MHz, 3-Pin D2PAK |
| Unit Price | 1,28 EUR |
| Minimum Order Quantity | 1 |
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| Weight and Dimension | |
| Description | Channel TypeN ConfigurationSingle Dimensions10.29 x 9.65 x 4.83mm Height4.83mm Length10.29mm Maximum Collector Emitter Voltage430 V Maximum Continuous Collector Current18 A Maximum Gate Emitter Voltage18V Maximum Operating Temperature+175 °C Maximum Power Dissipation115 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Package TypeD2PAK Pin Count3 Switching Speed1MHz Width9.65mm Product Details IGBT Discretes, ON Semiconductor IGBT Discretes, ON Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device. |
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