NVB5860NLT4G On Semiconductor ON Semiconductor NVB5860NLT4G N-channel MOSFET Transistor, 3-pin D2PAK

ProducentOn Semiconductor
Part Number

NVB5860NLT4G (NVB5860NLT4G)

Specifications

ON Semiconductor NVB5860NLT4G N-channel MOSFET Transistor, 3-pin D2PAK

Unit Price3,87 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionCategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.29 x 9.65 x 4.83mm Height4.83mm Length10.29mm Maximum Continuous Drain Current220 A Maximum Drain Source Resistance3.6 mΩ Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature175 °C Maximum Power Dissipation283 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeD2PAK Pin Count3 Typical Gate Charge @ Vgs220 nC@ 10 V Typical Input Capacitance @ Vds13216 pF@ 25 V Typical Turn-Off Delay Time98 ns Typical Turn-On Delay Time25 ns Width9.65mm Product Details N-Channel Power MOSFET, 60V to 90V, ON Semiconductor MOSFET Transistors, ON Semiconductor
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