MMBFJ309LT1G On Semiconductor RF JFET, N CHANNEL, 25V, SOT-23; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:-25V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:-4V; POWER DISSIPATION PD:2
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| Producent | On Semiconductor | | Part Number | MMBFJ309LT1G (MMBFJ309LT1G) |
| Specifications | RF JFET, N CHANNEL, 25V, SOT-23; TRANSISTOR TYPE:JFET; BREAKDOWN VOLTAGE VBR:-25V; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:-4V; POWER DISSIPATION PD:2 |
| Unit Price | 2,25 EUR |
| Minimum Order Quantity | 1 |
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| Description | Transistor type N-JFET Polarisation unipolar Drain-source voltage 25V Drain current 30mA Case SOT23 Mounting SMD Transistor type N-JFET Polarisation unipolar Drain-source voltage 25V Drain current 30mA Case SOT23 Mounting SMD Transistor type N-JFET Polarisation unipolar Drain-source voltage 25V Drain current 30mA Case SOT23 Mounting SMD Transistor type N-JFET Polarisation unipolar Drain-source voltage 25V Drain current 30mA Case SOT23 Mounting SMD |
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