2SD1803T-E On Semiconductor TRANS NPN 50V 5A TP Bipolar (BJT) Transistor NPN 50V 5A 180MHz 1W Through Hole TP

ProducentOn Semiconductor
Part Number

2SD1803T-E (2SD1803TE)

Specifications

TRANS NPN 50V 5A TP Bipolar (BJT) Transistor NPN 50V 5A 180MHz 1W Through Hole TP

Unit Price0,25 EUR
Minimum Order Quantity500
Tariff No.
Lead Time14 weeks
Weight and Dimension
DescriptionCategories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 3A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V Power - Max 1W Frequency - Transition 180MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TP
Datasheets
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