MUN5312DW1T2G On Semiconductor TRANS NPN/PNP PREBIAS SOT363 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363
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Producent | On Semiconductor | Part Number | MUN5312DW1T2G (MUN5312DW1T2G) |
Specifications | TRANS NPN/PNP PREBIAS SOT363 Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363 |
Unit Price | 296,35 EUR |
Minimum Order Quantity | 3 |
Tariff No. | |
Lead Time | 70 weeks |
Weight and Dimension | |
Description | Categories Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays, Pre-Biased Manufacturer ON Semiconductor Series - Packaging Tape & Reel (TR) Part Status Active Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) (Ohms) 22k Resistor - Emitter Base (R2) (Ohms) 22k DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 385mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |
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