BPW34 Osram Semiconductors IR-photodiode 850 nm DIL-2

ProducentOsram Semiconductors
Part Number

BPW34 (BPW34)

Specifications

IR-photodiode 850 nm DIL-2

Unit Price0,83 EUR
Minimum Order Quantity1
Tariff No.
Lead Time
Weight and Dimension
DescriptionOff-state voltage 32 V Wavelength of max. photosensitivity 850 nm Transmission angle 120 ° Photoelectric current 0.5...200 µA Package DIL-2 Family Information Photodiodes: An external voltage source is required for operating. An incident light beam leads to a rise of the barrier voltage of the diode. The higher the applied voltage, the faster the photodiode reacts to alterations of the light signal. Article Information Paper catalogues Page 300 Environmental information RoHS Conform
Datasheets
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