RJK60S7DPK-M0#T0 Renesas Electronics America MOSFET N-CH 600V 30A TO-3PSG N-Channel 600V 30A (Tc) 227.2W (Tc) Through Hole TO-3PSG
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Producent | Renesas Electronics America | Part Number | RJK60S7DPK-M0#T0 (RJK60S7DPKM0T0) |
Specifications | MOSFET N-CH 600V 30A TO-3PSG N-Channel 600V 30A (Tc) 227.2W (Tc) Through Hole TO-3PSG |
Unit Price | 11,02 EUR |
Minimum Order Quantity | 100 |
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Description | Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Renesas Electronics America Series - Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature Super Junction Power Dissipation (Max) 227.2W (Tc) Rds On (Max) @ Id, Vgs 125 mOhm @ 15A, 10V Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PSG Package / Case TO-3PSG |
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